IGBT SEMIKRON SKM900GA12E4 Infieon FZ900R12KE4
The SEMIKRON SKM900GA12E4 and Infineon FZ900R12KE4 are both high-power Application for IGBT (Insulated Gate Bi-polar Transistor) modules with very similar technical specifications, making them direct competitors or even potential replacements for each other in many applications.
IGBT characteristics:
- Technology: The SKM900GA12E4 uses an Infineon IGBT4 chip and a SEMIKRON CAL4 diode, while the FZ900R12KE4 is a product of Infineon’s C-Series with a Trench Field Stop IGBT. The core chip technology is essentially the same, as Semikron-Danfoss explicitly states the use of Infineon’s IGBT4 chip in their module.
- Voltage and Current:
- Collector-Emitter Voltage (Vces): 1200 V
- Continuous Collector Current (Ic): 900 A (at 25°C case temperature)
- Technical Features: The SKM900GA12E4 is noted for having an integrated gate resistor and being suitable for switching frequencies up to 12kHz, while the FZ900R12KE4 is optimized for high level switching performance.
Summery:
Both the SKM900GA12E4 and FZ900R12KE4 are active products and are currently in production. This means they are readily available from their respective manufacturers and authorized distributors in Bangladesh
