Photoelectric P+E sensor GL30-IR/32/40a/98a modulated infrared light best price seller in Bangladesh is BD Engineering. Photoelectric sensor detectors offer vast installation benefits thanks to their casing design. When it comes to operation, these new generation biases boast features similar to high resolution. High repetition, automatic signal threshold adaptation, ambient light resistance, the discovery of and/ or light sending through clear objects.
Cross-talk protection enables a resemblant fix of bias despite extremely high switching frequency. These characteristics guarantee the depend able discovery of small corridors, from 0.3 mm, across the entire discovery range, indeed in right presto moving operations. All types of sensors are available. Position Sensors, Pressure Sensors, Temperature Sensors, and other sensors are ready to stock at our warehouse. Photo Electric sensor many models are available.
- Optimized for the discovery of small corridor
- High switching frequency
- Multiple device installations possible, no collective hindrance( no cross-talk)
- perceptivity adjuster and light-on/dark-on transfiguration switch as standard features of this series
- Infrared light
- Degree of protection IP67
- cULus blessing
- Diecast zinc casing, greasepaint carpeted
Photoelectric P+E sensor Details
General Details | |
Light source | IRED |
Light type | light |
Tests | EN 60947 5 2 |
Target size | 0.3 mm |
Slot width | 30 mm |
Slot depth | 35 mm |
Ambient light limit | 100000 Lux |
Functional safety | |
MTTFd | 1290 a |
Mission Time (TM) | 20 a |
Diagnostic Coverage (DC) | 0 % |
Indicators &operating means | |
Function show | LED red |
Control elements | Sensitivity adjust, light & dark switch |
Electrical Details | |
Operating voltage | 10 … 30 V DC, class 2 |
Ripple | 10 % |
No-load supply current | ≤ 15 mA |
Output | |
Switching type | light dark on |
Signal output | 1 PNP, short circuit protected |
Switching voltage | max. 30 V DC |
Switching current | max. 100 mA |
Repeat | 0.05 mm |
Switching | 2 kHz |
Response time | ≤ 250 µs |